穿芯电容

一、 标称容量Capacitance ：

10pF,65pF,100pF,470pF,500pF,1000pF,1200pF,1500pF,1750pF,2000pF,2500pF,2700pF,

3000pF,3300pF,4700pF,5000pF,5500pF,6800pF,7000pF,9000pF,10000pF,0.01μF,0.012μF,
0.015μF,0.018μF,0.022μF,0.025μF,0.027μF,0.028μF,0.045μF,0.050μF,

0.056μF,0.075μF,0.08μF,0.1μF,0.15μF,0.21μF,0.3μF,0.75μF,0.8μF,1μF,

0.015μF,0.060μF,0.062μF,0.150μF,0.200μF,0.250μF,0.250μF,0.300μF,0.450μF,0.500μF,
0.7μF,0.750μF,0.990μF,1.0μF,1.2μF,1.4μF,1.5μF,2.1μF,2.8μF,

4.0μF,5.2μF

101100pF      331330pF    471 470pF
102 1000pF     3323300pF   4724700pF 
103 10000pF    33333000pF  47347000pF

1000pF=1nF  1000000pF=1μF  1000nF=1μF  1μF=1000nF=1000000pF  1F=1000000μF 

 

Code	Capacitancetolerance	Code	Capacitancetolerance
F	± 1pF	S	+ 50%, –20%
K	±10%	Z	+ 80%, –20%
M	±20%	P	+100%, – 0%

 

二、工作电流Rated Current ：

0.06A,0.15A,0.25A,0.3A,0.45A,0.5A,1A,2A,3A,4A,5A,10A,15A,25A,50A,100A

三、额定电压Rated Voltage ：

直流：5V,28V,35V,50V,60V,70V,80V,100V,150V,200V,250V,275V

     300V,330V,350V,400V,450V,500V,600V,750V,1250V,2500V

交流：70V,85V,90V,115V,125V,140V,200V,220V,230V,240V,330V,350V

四、耐电压DielectricWithstandingVoltage ：

直流：额定电压的2.5倍      交流：额定电压的6倍的直流电压

五、工作温度WorkingTemperatureRange：

E：-10-+85℃  F：-25-+85℃  G：-30-+125℃

H：-40-+85℃  I：-55-+85℃  J：-55-+125℃

 

温度特征	电容变化	温度范围
SL	SL(0±30ppm/°C)	–25~+ 85°C
B	B(+10~ –10%)
D	D(+20~ –30%)
E	E(+20~ –55%)
F	F(+30~ –80%)
C	CG(+350~ –1000ppm/°C)	–55~+125°C
R	R(+15~ –15%)

 

六、EMI滤波器的构成
滤波电容
滤波器所用的电容一般为陶瓷电容。由于其物理结构，这种陶瓷电容又称为穿心式电容。
穿心式电容自电感较普通电容小得多，故而自谐振频率很高。同时，穿心式设计，也有效
地防止了高频信号从输入端直接耦合到输出端。这种低通高阻的组合，在1GHz 频率范围内，
提供了极好的抑制效果。
*简单的穿心结构是由内外电极和陶瓷构成的一个（C 型）或两个电容（Pi 型）。
这种电容的容量可从10pF，工作电压可达2000VDC。管式穿心电容因为其同轴性，即使在
10GHz 频率，也不会产生明显的自谐振。
穿心电容的介质为陶瓷介质，而陶瓷电容的容量会随环境温度变化而变化，这种容量变化
会影响滤波器的滤波截止率。陶瓷电容的容量温度变化率是由陶瓷介质本身决定的。因此，
选择适当的陶瓷介质非常重要。常见陶瓷介质及其容量温度变化率如下：