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穿芯电容


穿芯电容

一、 标称容量Capacitance

 

10pF,65pF,100pF,470pF,500pF,1000pF,1200pF,1500pF,1750pF,2000pF,2500pF,2700pF,

3000pF,3300pF,4700pF,5000pF,5500pF,6800pF,7000pF,9000pF,10000pF,0.01μF,0.012μF,
0.015μF,0.018μF,0.022μF,0.025μF,0.027μF,0.028μF,0.045μF,0.050μF,

0.056μF,0.075μF,0.08μF,0.1μF,0.15μF,0.21μF,0.3μF,0.75μF,0.8μF,1μF,

0.015μF,0.060μF,0.062μF,0.150μF,0.200μF,0.250μF,0.250μF,0.300μF,0.450μF,0.500μF,
0.7μF,0.750μF,0.990μF,1.0μF,1.2μF,1.4μF,1.5μF,2.1μF,2.8μF,

4.0μF,5.2μF

101100pF      331330pF    471 470pF
102 1000pF     3323300pF   4724700pF 
103 10000pF    33333000pF  47347000pF

 

1000pF=1nF  1000000pF=1μF  1000nF=1μF  1μF=1000nF=1000000pF  1F=1000000μF 

 

 

Code

Capacitancetolerance

Code

Capacitancetolerance

F

± 1pF

S

+ 50%, –20%

K

±10%

Z

+ 80%, –20%

M

±20%

P

+100%, – 0%



 

 

 

 

二、工作电流Rated Current

0.06A,0.15A,0.25A,0.3A,0.45A,0.5A,1A,2A,3A,4A,5A,10A,15A,25A,50A,100A

 

三、额定电压Rated Voltage

直流:5V,28V,35V,50V,60V,70V,80V,100V,150V,200V,250V,275V

     300V,330V,350V,400V,450V,500V,600V,750V,1250V,2500V

交流:70V,85V,90V,115V,125V,140V,200V,220V,230V,240V,330V,350V

 

四、耐电压DielectricWithstandingVoltage

直流:额定电压的2.5     交流:额定电压的6倍的直流电压

 

五、工作温度WorkingTemperatureRange

E-10-+85  F-25-+85  G-30-+125

H-40-+85  I-55-+85  J-55-+125

 

 

温度特征

电容变化

温度范围

SL

SL(0±30ppm/°C)

–25~+ 85°C

B

B(+10~ –10%)

D

D(+20~ –30%)

E

E(+20~ –55%)

F

F(+30~ –80%)

C

CG(+350~ –1000ppm/°C)

–55~+125°C

R

R(+15~ –15%)



 

 

 

 

六、EMI滤波器的构成
滤波电容
滤波器所用的电容一般为陶瓷电容。由于其物理结构,这种陶瓷电容又称为穿心式电容。
穿心式电容自电感较普通电容小得多,故而自谐振频率很高。同时,穿心式设计,也有效
地防止了高频信号从输入端直接耦合到输出端。这种低通高阻的组合,在1GHz 频率范围内,
提供了极好的抑制效果。
*简单的穿心结构是由内外电极和陶瓷构成的一个(C 型)或两个电容(Pi 型)。
这种电容的容量可从10pF,工作电压可达2000VDC。管式穿心电容因为其同轴性,即使在
10GHz
频率,也不会产生明显的自谐振。
穿心电容的介质为陶瓷介质,而陶瓷电容的容量会随环境温度变化而变化,这种容量变化
会影响滤波器的滤波截止率。陶瓷电容的容量温度变化率是由陶瓷介质本身决定的。因此,
选择适当的陶瓷介质非常重要。常见陶瓷介质及其容量温度变化率如下:

 

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EIA 介质类别

COGNP0

X7R

Z5U

Y5V

超稳定

稳定

一般用途

工作温度范围

-55℃~+125℃

-55 ℃~+125 ℃

-10℃~+85 ℃

-30℃~+85℃

*大容量温度变化率

0±30ppm/℃

± 15 %

-22% ~+56 %

-22%~+82%

绝缘电阻Ri

≥104mΩ

Cr ≤ 25nF Ri ≤ 4000MΩ
Cr ≤ 25nF Ri* ≤ 100S

损耗(tanб

Cr>50pF≤0.015
Cr≤50pF≤0.015
15/Cr+0.7

<0.025

<0.030

0.050

介质强度

工作电压

200V

500V

>1KV

施加工作电压的倍数(加压时间5 秒,充电电流50max

X2.5

X2.5

X2.5

X2.5

X1.5

X1.5

X1.5

X1.5

X125


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