恒温晶振的技术选型

OCXO    OvencontrolledCrystalOscillators  恒温晶振

一、应用                  

通讯、航空、航天、移动通信、数字程控交换机、网络传输、接入网、光传输、雷达、导航、电子对抗、无线通信、测试设备、锁相环电路SDH、SONET、ATM、WLL、PCS基站、蜂窝基站、频率合成器

二、主要技术指标

1)FrequencyRange频率范围:1.00-200.00MHz

2.5MHz,3.2MHz,4.608MHz,4.096MHz,5MHz,5.12MHz,6.4MHz,6.5MHz,6.72996MHz,
8.192MHz,9.216MHz,10MHz,10.24MHz,12MHz,12.24MHz,12.288MHz,12.8MHz,13MHz,14.4MHz,

14.7456MHz,14.85MHz,16MHz,16.32MHz,16.368MHz,16.384MHz,16.8MHz,17MHz,

18.432MHz,19.2MHz,19.44MHz,19.68MHz,19.7985MHz,19.8MHz,20MHz,20.46MHz,20.48MHz,

20.82857MHz,24MHz,24.576MHz,25MHz,25.6MHz,26MHz,26.451788MHz,27MHz,29.952MHz,

32MHz,32.768MHz,33MHz,36.864MHz,38MHz,38.88MHz,40MHz,50MHz,61.44MHz,77.76MHz,
100MHz,120MHz,122.88MHz,140MHz,160MHz,180MHz,200MHz

2)SC Cut OCXO   AT Cut OCXO

3)InitialCalibration频率准确度:A ≤±0.5ppm@25℃    B ≤±0.1ppm @25℃ 

                                 C≤±0.05ppm @25℃   D ≤±0.01ppm @25℃  

4)FrequencyAdjustment频率调整:  1≥±0.5ppm 2≥ ±1.0ppm 3≥ ±3.0ppm

                                 4≥±5.0ppm 5 ≥ ±7.0ppm 6≥ ±10ppm

5)ControlVoltage压控电压 ：0 - 5V

6)OperatingTemperature工作温度范围:E    0-+50℃  F  -10-+60℃  G  -20-+70℃ 

H  -30-+75℃  I  -40-+75℃  J  -40-+85℃

7)FrequencyStability温度频率稳定度: 1 ppb= ppm 1/1000

K  ±0.1ppm    L  ±0.05ppm   M  ±0.03ppm     N  ±0.02ppm

O  ±0.01ppm    P ±0.03ppm     Q  ±0.005ppm    R  ±0.001ppm

8)OutputWaveform输出波形: 1HCMOS           2 TTL                 3 ACMOS

4Sine  输出电平  ≥+2dBm    ≥+5dBm   @ 50Ω

谐波抑制  ≤-20dBc   ≤-30dBc  @50Ω

杂波抑制  ≤-70dBc   ≤-75dBc  @50Ω

5ClippedSine     ≥1Vp-p   10kΩ//10pF

9)SupplyVoltage工作电压范围: S 3.3V  T 5.0V   U 12.0V   W  15.0V

10)PowerConsumption功耗：Warmup 开机 ≤3.5W-7.0W 

                          @25℃   稳定 ≤1.2W-3.5W

11)PhaseNoise相位噪声:

 

Frequency	10Hz	100Hz	1kHz	10kHz	100kHz
10.0MHz	–1120dBc/Hz	–150dBc/Hz	–160dBc/Hz	–165dBc/Hz	–170dBc/Hz
10.0MHz	–120dBc/Hz	–140dBc/Hz	–150dBc/Hz	–155dBc/Hz	–160dBc/Hz
10.0MHz	–115dBc/Hz	–135dBc/Hz	–145dBc/Hz	–150dBc/Hz	–155dBc/Hz
10.0MHz	–100dBc/Hz	–130dBc/Hz	–140dBc/Hz	–145dBc/Hz	–150dBc/Hz

12)Ageing频率老化率: ±0.1ppmmaximumin first year ±1.0ppm maximum for10years

                     ±0.5ppm maximum in first year ±2.0ppm maximum for 10 years 

	VC-OCXO      OCXO
Size(mm)	DIP 36.0X27.0X16.0mm     DIP 30.0X30.0X15.0mm
	AT CUT                       SCCUT
Output Frequency Range	1-100 MHz
Freq Stability Calibration	≤±0.05ppm    (with frequency adjustment)
Vs. Temperature	±0.03ppm ±0.05ppm ±0.1ppm ±0.2ppm ±0.005ppm ±0.01ppm±0.02ppm
	0-50°C  -10-+60°C -20-+70°C  -30-+70°C  -40-+70°C -40-+85°C
Vs. Supply Voltage	≤±0.005ppm
Vs. Load Variation	≤±0.005ppm
Vs.Aging	±0.003ppm/day ±0.3ppm/year       ±0.0005ppm/day±0.05ppm/year
Supply Voltage (Vdd)	+5VDC   +9VDC   +12VDC
Output Level	Sinewave HCMOS  TTL
Frequency  Adjustment	±2.0ppm/0-5V                    ±0.5ppm/0-5V
Phase Noise   10MHz	10Hz          -115dBc/Hz@1KHz  100Hz         -135dBc/Hz@1KHz  1kHz          -145dBc/Hz@1KHz  10kHz         -150dBc/Hz@1KHz
Supply Consumption	4.5W(max) when warm-up   1.5W(max) @ 25°C
Warm-up Time	±0.05ppm,<5min                           ±0.02ppm,<5min
	VC-OCXO      OCXO
Size(mm)	DIP 25.0X25.0X13.0mm     DIP 20.0X20.0X11.0mm
	AT CUT                       SCCUT
Output Frequency Range	1-100 MHz
Freq Stability Calibration	≤±0.1ppm    (with frequency adjustment)
Vs. Temperature	±0.05ppm ±0.1ppm ±0.2ppm ±0.01ppm ±0.02ppm ±0.03ppm ±0.05ppm
	0-50°C  -10-+60°C -20-+70°C  -30-+70°C  -40-+70°C -40-+85°C
Vs. Supply Voltage	≤±0.005ppm
Vs. Load Variation	≤±0.005ppm
Vs.Aging	±0.003ppm/day ±0.3ppm/year       ±0.001ppm/day±0.1ppm/year
Supply Voltage (Vdd)	+5VDC   +9VDC   +12VDC
Output Level	Sinewave HCMOS  TTL
Frequency  Adjustment	±2.0ppm/0-5V                    ±0.5ppm/0-5V
Phase Noise   10MHz	10Hz          -115dBc/Hz@1KHz  100Hz         -135dBc/Hz@1KHz  1kHz          -145dBc/Hz@1KHz  10kHz         -150dBc/Hz@1KHz
Supply Consumption	3.6W(max) when warm-up   1.2W(max) @ 25°C
Warm-up Time	±0.05ppm,<5min                           ±0.02ppm,<5min
	VC-OCXO      OCXO
Size(mm)	DIP 21.0X13.0X11.0mm
Output Frequency Range	1-100 MHz
Freq Stability Calibration	≤±0.5ppm    (with frequency adjustment)
Vs. Temperature	±0.05ppm ±0.1ppm ±0.2ppm ±0.3ppm
	0-50°C  -10-+60°C -20-+70°C  -30-+70°C  -40-+70°C -40-+85°C
Vs. Supply Voltage	≤±0.05ppm
Vs. Load Variation	≤±0.05ppm
Vs.Aging	±0.01ppm/day ±0.5ppm/year
Supply Voltage (Vdd)	+5VDC   +9VDC   +12VDC
Output Level	Sinewave HCMOS  TTL
Frequency  Adjustment	±2.0ppm/0-5V
Phase Noise   10MHz	10Hz          -110dBc/Hz@1KHz  100Hz         -130dBc/Hz@1KHz  1kHz          -140dBc/Hz@1KHz  10kHz         -145dBc/Hz@1KHz
Supply Consumption	3.6W(max) when warm-up   1.2W(max) @ 25°C
Warm-up Time	±0.5ppm,<2min

 

 

 

 

13)Package Outline 封装、尺寸:

N DIP 21*13*12mm   O DIP 20*20*10mm  P DIP 25*19*15mm      Q DIP 30*30*16mm

R DIP 36*27*16mm   S DIP 38*38*16mm  T DIP 50*50*16mm      U SMD 25*22*14mm

14)StorageTemperature储存温度范围： -55-+90℃

三、产品定型 RTO-10MHZ-SC A 1 J K 1 U N

 

	频率	晶体	准确度	调整	温度范围	稳定性	波形	电压	尺寸
RTO	10	SC	A	1	J	K	1	U	N
RTO	10MHZ	SC cut	0.5ppm	0.5ppm	-40-+85	0.1ppm	HCMOS	12V	DIP

恒温晶振的技术选型 恒温晶振的技术选型 恒温晶振的技术选型 恒温晶振的技术选型 恒温晶振的技术选型