关于温补晶振的最新技术指标
TCXO TemperatureCompensatedCrystalOscillators 温补晶振
TCVCXO TemperatureCompensatedVoltageControlledOscillators 温补压控晶振
温补晶振
资料下载地址：
http://www.ractron.com.cn/ractron_Files.html
TCXO TemperatureCompensatedCrystalOscillators 温补晶振
TCVCXO TemperatureCompensatedVoltageControlled Oscillators 温补压控晶振
一、应用
通讯、航空、航天、军事、移动通信、数字程控交换机、网络传输、接入网、光传输、
雷达、导航、电子对抗、无线通信、测试设备、锁相环电路SDH、SONET、ATM、WLL、
PCS基站、蜂窝基站、频率合成器
二、主要技术指标
1)FrequencyRange频率范围:1.00-200.00MHz
2.5MHz,3.2MHz,4.608MHz,4.096MHz,5MHz,5.12MHz,6.4MHz,6.5MHz,6.72996MHz,
8.192MHz,9.216MHz,10MHz,10.24MHz,12MHz,12.24MHz,12.288MHz,12.8MHz,13MHz,14.4MHz,
14.7456MHz,14.85MHz,16MHz,16.32MHz,16.368MHz,16.384MHz,16.8MHz,17MHz,
18.432MHz,19.2MHz,19.44MHz,19.68MHz,19.7985MHz,19.8MHz,20MHz,20.46MHz,20.48MHz,
20.82857MHz,24MHz,24.576MHz,25MHz,25.6MHz,26MHz,26.451788MHz,27MHz,29.952MHz,
32MHz,32.768MHz,33MHz,36.864MHz,38MHz,38.88MHz,40MHz,50MHz,61.44MHz,77.76MHz,
100MHz,120MHz,122.88MHz,140MHz,160MHz,180MHz,200MHz
2)InitialCalibration频率准确度:A ≤±1.0ppm@25℃ B ≤±0.5ppm @25℃
3)FrequencyAdjustment频率调整: 1Ageingadjustment:≥±5ppm
2 Nofrequency adjustment
4)OperatingTemperature工作温度范围:C -20-+70℃ D -40-+85℃ E -55-+105℃
5)FrequencyStability温度频率稳定度:F ±0.28ppm G ±0.5ppm H ±1.0ppm
I ±1.5ppm J ±2.0ppm K ±2.5ppm
6)OutputWaveform输出波形: 1Sine 正弦波 2Hcmos 方波3 ClippedSine削峰正弦波
7)SupplyVoltage工作电压范围: L3.3V±10% M5.0V±10%
8)Ageing 频率老化率: ±1ppmmaximuminfirstyear,±3ppmmaximumfor10years
9)PhaseNoise相位噪声:
Frequency | 10Hz | 100Hz | 1kHz | 10kHz | 100kHz |
13.0MHz | –95 dBc/Hz | –120dBc/Hz | –135dBc/Hz | –140dBc/Hz | –145dBc/Hz |
10)PackageOutline封装、尺寸:
N DIP 21*13*5mm O DIP 18*12*5mm P DIP 20*20*10mm Q DIP 36*27*16mm
R SMD 5*3*1mm S SMD 7*5*2mm T SMD 9*7*3mm U SMD 14*9*6mm
11)StorageTemperature储存温度范围： -55-+125℃
三、产品定型 RTT-10MHZ-B 2 D G 1 M S
| 频率 | 准确度 | 频率调整 | 温度范围 | 稳定性 | 波形 | 电压 | 尺寸 |
RTT | 10 | B | 2 | D | G | 1 | M | S |
RTT | 10MHZ | ±0.5ppm @25℃ | Nofrequencyadjustment | -40-+85 ℃ | ±0.5ppm | Sine | 5.0V | SMD 7*5*2mm |
封装 | 尺寸 | 电压 | 频率 | MHz | 稳定性 | 工作温度 | 输出波形 |
TCXOsSMD | 11x9mm | 3.0V | 9.6to40 | MHz | ±2.5ppm ±5ppm | -30to75°C | ClippedSine |
TCXOsSMD | 7x5mm | 3.0V | 10to26 | MHz | ±1.5ppm±2ppm±2.5ppm | -40to85°C | ClippedSine |
TCXOsSMD | 7x5mm | 3.3V | 10to40 | MHz | ±0.9ppm | -20to70°C | HCMOS |
TCXOsSMD | 5x3mm | 3.0V | 16to33.6 | MHz | ±0.5ppm | -40to85°C | ClippedSine |
TCXOsSMD | 5x3mm | 3.0V | 10to30 | MHz | ±1.5ppm±2ppm±2.5ppm | -40to85°C | ClippedSine |
TCXOsSMD | 7x5mm | 3.3V | 10to40 | MHz | ±0.9ppm | -20to70°C | HCMOS |
TCXOsSMD | 7x5mm | 3.3V | 10to40 | MHz | ±0.5ppm | -40to85°C | HCMOS |
TCXOsSMD | 7x5mm | 5.0V | 1.25to40 | MHz | ±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm | -40to85°C | SquareHCOMS |
TCXOsSMD | 7x5mm | 5.0V | 10to40 | MHz | ±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm | -40to85°C | SquareHCOMS |
TCXOsSMD | 7x5mm | 5.0V | 10to40 | MHz | ±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm | -40to85°C | SquareHCOMS |
TCXOsSMD | 7x5mm | 3.3V | 1.25to40 | MHz | ±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm | -40to85°C | SquareHCOMS |
TCXOsSMD | 7x5mm | 3.3V | 10to40 | MHz | ±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm | -40to85°C | SquareHCOMS |
TCXOsSMD | 7x5mm | 3.3V | 10to40 | MHz | ±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm | -40to85°C | ClippedSine |
TCXOsSMD | 14.1x9.1mm | 5.0V | 1to50 | MHz | ±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm | -55to105°C | SquareHCOMS |
TCXOsSMD | 14.1x9.1mm | 5.0V | 8to50 | MHz | ±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm | -55to105°C | Sine |
TCXOsSMD | 14.1x9.1mm | 5.0V | 1to80 | MHz | ±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm | -55to105°C | SquareACMOS |
TCXOsSMD | 14.1x9.1mm | 5.0V | 8to50 | MHz | ±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm | -55to105°C | ClippedSine |
TCXOsSMD | 14.1x9.1mm | 3.3V | 1to50 | MHz | ±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm | -55to105°C | SquareHCOMS |
TCXOsSMD | 14.1x9.1mm | 3.3V | 8to50 | MHz | ±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm | -55to105°C | Sine |
TCXOsSMD | 14.1x9.1mm | 3.3V | 1to80 | MHz | ±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm | -55to105°C | SquareACMOS |
TCXOsSMD | 14.1x9.1mm | 3.3V | 8to50 | MHz | ±0.3ppm±0.5ppm±1ppm
±1.5ppm ±2ppm ±2.5ppm | -55to105°C | ClippedSine |
TCXOsSMD | 5x3mm | 3.3V | 1to52 | MHz | ±0.2ppm±0.3ppm ±0.5ppm±1ppm±2ppm | -40to85°C | SquareHCOMS |
TCXOsSMD | 5x3mm | 3.0V | 12to52 | MHz | ±0.2ppm±0.3ppm
±0.5ppm ±1ppm ±2ppm | -40to85°C | ClippedSine |
| VC-TCXO TCXO |
Size(mm) | SMD 5.0X3.2X1.05 mm |
Output Frequency Range | 10MHz - 40 MHz |
Supply Voltage (Vdd) | +3.3V |
Current Consumption | +1.2mA ≤15MHz +1.4mA15-26MHz +1.6mA>26MHz |
Output Level | 0.8Vp-p min. Clipped sinewave/ DC-coupled 10kΩ // 10pF |
Freq Stability Tolerance | ≤±1.5ppm (with frequency adjustment) |
Vs. Temperature | H: ≤±1.0ppm D:-40-+85°C G:≤±0.5ppm D:-40-+85°C |
Vs. Supply Voltage | ≤±0.2ppm |
Vs. Load Variation | ≤±0.2ppm |
Vs.Aging | ≤±1.0ppm/year |
Frequency Control | ±3.0ppm-±5.0ppm/+1.5+-1V |
Phase Noise | ≤15MHz 15-26MHz >26MHz -115dBc/Hz@100Hz -110dBc/Hz@100Hz -105dBc/Hz@100hz -135dBc/Hz@1KHz -130dBc/Hz@1KHz -125dBc/Hz@1Khz -145dBc/Hz@10KHz -140dBc/Hz@10KHz -135dBc/Hz@10Khz -145dBc/Hz@100KHz -145dBc/Hz@100KHz -145dBc/Hz@100Khz |
|
VC-TCXO TCXO
Size(mm): DIP25.0X15.0X10.0mm DIP21.0X13.0X7.0mm
Output Frequency Range:1MHz-200MHz 1MHz-30MHz
Supply Voltage(Vdd): +3.3VDC +5VDC +12VDC
Current Consumption: +10mA
OutputLevel:Sinewave HCMOS TTL ClippedSinewave
Freq Stability Calibration:≤±0.5ppm (withfrequencyadjustment)
Vs. Temperature:≤±0.2ppm ≤±0.3ppm ≤±0.4ppm ≤±0.5ppm ≤±1.0ppm
-10-+60°C -20-+70°C -30-+70°C -40-+85°C
Vs. Supply Voltage: ≤±0.1ppm
Vs. Load Variation: ≤±0.1ppm
Vs.Aging: ≤±1.0ppm/year
Frequency Control: ±3.0ppm/0-5V
PhaseNoise:10MHz -130dBc/Hz@1KHz
参数名称 | 技术指标 |
外形尺寸 | DIP13*13*6mm 18.3*11.7*9mm 21*13*7mm |
输出 | 频率(f0) | 1-200MHz |
正弦波 | 输出幅度 | +7dBmMin. |
杂散 | -70dBcMax. |
谐波 | -30dBcMax. |
负载(Load) | 50Ω |
方波 | 电平 | HCMOS |
占空比 | 45～55% |
上升/下降时间 | 4nSMax. |
负载(Load) | 4TTL |
| 温度特性(df/f0) | ±1ppmMax. -20～70℃ |
±2ppmMax. -40～85℃ |
日老化率(df/f0) | ±0.01ppmMax. |
频率稳定度 | 年老化率(df/f0) | ±1ppmMax. |
电压特性(df/f0) | ±0.1ppmMax.Vs±5% |
负载特性(df/f0) | ±0.1ppmMax.Load±10% |
短稳(df/f0) | 0.5ppbMax. |
相位 噪声 | @10Hz | -90dBc/HzMax. |
@100Hz | -110dBc/HzMax. |
@1kHz | -135dBc/HzMax. |
@10kHz | -140dBc/HzMax. |
微调 | 电压 微调 | 牵引范围(df/f0) | ±5ppmMin. |
控制电压范围 | 1.5±1.0VDC/2.5±2.5VDC |
线性度 | ±10%Max. |
输入阻抗 | 20kΩMin. |
功耗 | 工作电压(Vs) | +3.3VDC +5VDC |
工作电流 | 8mA |
2.5MHz,3.2MHz,4.608MHz,4.096MHz,5MHz,5.12MHz,6.4MHz,6.5MHz,6.72996MHz,8.192MHz,
9.216MHz,10MHz,10.24MHz,12MHz,12.24MHz,12.288MHz,12.8MHz,13MHz,14.4MHz,
14.7456MHz,14.85MHz,16MHz,16.32MHz,16.368MHz,16.384MHz,16.8MHz,17MHz,
18.432MHz,19.2MHz,19.44MHz,19.68MHz,19.7985MHz,19.8MHz,20MHz,20.46MHz,20.48MHz,
20.82857MHz,24MHz,24.576MHz,25MHz,25.6MHz,26MHz,26.451788MHz,27MHz,29.952MHz,
32MHz,32.768MHz,33MHz,36.864MHz,38MHz,38.88MHz,40MHz,50MHz,61.44MHz,77.76MHz,
100MHz,120MHz,122.88MHz,140MHz,160MHz,180MHz,200MHz
温补晶振TCXO 10MHz ±0.5ppm, －40℃~+85℃,5.0V,sine输出,不带频率调整,封装SMD7×5×2mm
温补晶振TCXO 10MHz ±0.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5×2mm
温补晶振TCXO 10MHz ±0.5ppm, －40℃~+85℃,3.3V,sine输出,带频率调整,封装SMD7×5×2mm
温补晶振TCXO 10MHz ±0.5ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm
温补晶振TCXO 10MHz ±1.0ppm, －20℃~ +70℃, 3.3V, Hcmos,带频率调整,封装SMD7×5×2mm
温补晶振TCXO 10MHz ±1.5ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm
温补晶振TCXO 10MHz ±2.0ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm
温补晶振TCXO 10MHz ±2.5ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm
温补晶振TCXO 10MHz ±1.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm
温补晶振TCXO 10MHz ±2.0ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm
温补晶振TCXO 10MHz ±2.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm
温补晶振TCXO 10MHz ±1.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm
温补晶振TCXO 10MHz ±2.0ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm
温补晶振TCXO 10MHz ±2.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm
温补晶振TCXO 20MHz ±0.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5×2mm
温补晶振TCXO 20MHz ±0.5ppm, －40℃~+85℃,3.3V,sine输出,不带频率调整,封装SMD7×5×2mm
温补晶振TCXO 20MHz ±0.5ppm, －40℃~+85℃,3.3V,sine输出,带频率调整,封装SMD7×5×2mm
温补晶振TCXO 20MHz ±0.5ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm
温补晶振TCXO 20MHz ±1.0ppm, －20℃~ +70℃, 3.3V, Hcmos,带频率调整,封装SMD7×5×2mm
温补晶振TCXO 20MHz ±1.5ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm
温补晶振TCXO 20MHz ±2.0ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm
温补晶振TCXO 20MHz ±2.5ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm
温补晶振TCXO20MHz ±1.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm
温补晶振TCXO 20MHz ±2.0ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm
温补晶振TCXO 20MHz ±2.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm
温补晶振TCXO 20MHz ±1.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm
温补晶振TCXO 20MHz ±2.0ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm
温补晶振TCXO 20MHz ±2.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm
温补晶振TCXO 40MHz ±0.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5×2mm
温补晶振TCXO 40MHz ±0.5ppm, －40℃~+85℃,3.3V,sine输出,不带频率调整,封装SMD7×5×2mm
温补晶振TCXO 40MHz ±0.5ppm, －40℃~+85℃,3.3V,sine输出,带频率调整,封装SMD7×5×2mm
温补晶振TCXO 40MHz ±0.5ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm
温补晶振TCXO 40MHz ±1.0ppm, －20℃~ +70℃, 3.3V, Hcmos,带频率调整,封装SMD7×5×2mm
温补晶振TCXO 40MHz ±1.5ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm
温补晶振TCXO 40MHz ±2.0ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm
温补晶振TCXO 40MHz ±2.5ppm, －40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm
温补晶振TCXO 40MHz ±1.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm
温补晶振TCXO 40MHz ±2.0ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm
温补晶振TCXO 40MHz ±2.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm
温补晶振TCXO 40MHz ±1.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm
温补晶振TCXO 40MHz ±2.0ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm
温补晶振TCXO 40MHz ±2.5ppm, －40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD 7×5mm
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